1 C4D02120E silicon carbide schottky diode z -r ec ? r ectifier features ? 1.2kv schottky rectifer ? optimized for pfc boost diode application ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? solar inverters ? power factor correction ? led lighting power supplies ? x-ray tube power drivers ? ev charging and power conversion package to-252-2 part number package marking C4D02120E to-252-2 c4d02120 pin 1 pin 2 case maximum ratings (t c =25c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v dc dc blocking voltage 1200 v i f maximum dc current 9 4.5 2 a t c =25?c t c =135?c t c =162?c i frm repetitive peak forward surge current 14.4 10 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive peak forward surge current 19 16.5 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i f,max non-repetitive peak forward current 200 160 a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse p tot power dissipation 51.7 22.4 w t c =25?c t c =110?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c v rrm = 1200 v i f ( t c =135?c)? = 4.5 a q c = 11 nc C4D02120E rev. f
2 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.4 1.9 1.8 3 v i f = 2 a t j =25c i f = 2 a t j =175c i r reverse current 10 40 50 150 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 11 nc v r = 800 v, i f = 2a d i /d t = 200 a/ s t j = 25c c total capacitance 167 11 8 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc to-252 package thermal resistance from junction to case 2.9 c/w typical performance figure 1. forward characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 figure 2. reverse characteristics 0 100 200 300 400 500 600 0 500 1000 1500 2000 i f (a) v f (v) i r (a) v r (v) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c C4D02120E rev. f
3 figure 3. current derating 0 10 20 30 40 50 60 25 50 75 100 125 150 175 typical performance 15 20 25 30 35 0 5 10 15 25 50 75 100 125 150 175 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 20 40 60 80 100 120 140 160 180 0.1 1 10 100 1000 figure 4. power derating figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage i f(peak) (a) t c ?c p tot (w) t c ?c c (pf) v r (v) 0 2 4 6 8 10 12 14 16 0 200 400 600 800 1000 v r (v) qrr (nc) C4D02120E rev. f
4 3.0 4.0 5.0 6.0 capacitive energy (uj) 0.0 1.0 2.0 0 200 400 600 800 1000 e c capacitive energy (uj) v r reverse voltage (v) typical performance 100 1000 i fsm (a) 10 1.e-05 1.e-04 1.e-03 1.e-02 tp(s) 1000 100 10 figure 7. typical capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) t j = 25c t j = 110c v r (v) 6 5 4 3 2 1 0 0 200 400 600 800 1000 e c ( m j) 1e-05 1e-04 1e-03 1e-02 figure 9. transient thermal impedance 100e-3 1 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 1e-3 10e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 p t (sec) C4D02120E rev. f
5 recommended solder pad layout part number package marking C4D02120E to-252-2 c4d02120 to-252-2 package dimensions package to-252-2 note:?recommended?soldering?profles?can?be?found?in?the?applications?note?here: http://www.cree.com/power_app_notes/soldering C4D02120E rev. f
6 6 diode model note: t j = diode junction temperature in degrees celsius , valid from 25c to 175c v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) v ft = v t +if*r t v t = 0.9592+(t j * -1.20*10 -3 ) r t = 0.1673+(t j * 2.10*10 -3 ) C4D02120E rev. f copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes
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